Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.ceramint.2003.12.093
Title: 0.67Pb(Mg1/3Nb2/3)O3-0.33PbTiO3 thin films derived from RF magnetron sputtering
Authors: Li, W.Z. 
Xue, J.M. 
Zhou, Z.H. 
Wang, J. 
Zhu, H.
Miao, J.M.
Keywords: Ferroelectric thin films
PMN-PT
RF magnetron sputtering
Issue Date: 2004
Source: Li, W.Z., Xue, J.M., Zhou, Z.H., Wang, J., Zhu, H., Miao, J.M. (2004). 0.67Pb(Mg1/3Nb2/3)O3-0.33PbTiO3 thin films derived from RF magnetron sputtering. Ceramics International 30 (7) : 1539-1542. ScholarBank@NUS Repository. https://doi.org/10.1016/j.ceramint.2003.12.093
Abstract: Lead magnesium niobate-lead titanate (0.67Pb(Mg1/3Nb 2/3)O3-0.33PbTiO3, PMN-PT) thin films have been successfully deposited on Pt/Ti/SiO2/Si substrates by RF magnetron sputtering. Annealing at 550°C led to a well established perovskite structure. The annealed films exhibited well-defined hysteresis loops, with a respective remanent polarization (2Pr) of 27.4μC/cm2 and coercive field (2Ec) of 58.6kV/cm at an applied electric field of 250KV/cm at room temperature. A dielectric constant of 947 and a dielectric loss of 3.8% were measured for the PMN-PT thin film at 100kHz. The annealed films were found to be little fatigue even after 1010 number of switching cycles. The ferroelectric properties of these PMN-PT thin films, which are compared favourably with those of PMN-PT thin films via other deposition routes, are accounted for by their structural features. © 2004 Elsevier Ltd. and Techna Group S.r.l. All rights reserved.
Source Title: Ceramics International
URI: http://scholarbank.nus.edu.sg/handle/10635/107253
ISSN: 02728842
DOI: 10.1016/j.ceramint.2003.12.093
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