Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/79260
Title: P-TYPE SEMICONDUCTOR SENSITIZED SOLAR CELLS
Authors: FATEMEH SAFARI-ALAMUTI
Keywords: NiO, Solar cell, DSC, SSC, IPCE, CdX
Issue Date: 20-Jan-2014
Source: FATEMEH SAFARI-ALAMUTI (2014-01-20). P-TYPE SEMICONDUCTOR SENSITIZED SOLAR CELLS. ScholarBank@NUS Repository.
Abstract: SENSITIZATION OF P-TYPE NIO WITH SEMICONDUCTOR SENSITIZERS SUCH AS CDSE IS THE TARGET OF THIS RESEARCH. IN THIS RESEARCH, ATTEMPTS TO FABRICATION OF P-NIO-SSC, PERFORMANCE IMPROVEMENT ARE TARGETED AND PROMISING IPCE WAS ACHIEVED. WITH A POLYSULFIDE REDOX ELECTROLYTE, CDX (X=S AND SE)-SENSITIZED P-NIO SOLAR CELLS ARE UNAMBIGUOUSLY DEMONSTRATED WHEN NIO BLOCKING LAYERS ARE USED. TO DECREASE THE RECOMBINATION RATE, CDS BARRIER LAYER WAS DEPOSITED BETWEEN NIO AND CDSE SENSITIZER WHICH RESULTS IN MUCH ENHANCED CELL PERFORMANCE. FRONT/REAR IPCE MEASUREMENTS INDICATE THAT CHARGE COLLECTION IN THIS SYSTEM IS LIMITED BY A SHORT HOLE DIFFUSION LENGTH. FURTHERMORE, IT WAS OBSERVED THAT THE SURFACE ENGINEERING ENHANCED THE PERFORMANCE AND IPCE OF SOLAR CELL. SPECIFICALLY, EXISTENCE OF ZNSE LAYER RESULTED IN TWO FOLD IPCE ENHANCEMENT IN THE CASE OF ZNSE/CDS-NIO. IN ADDITION, DATA REVEALED THAT THE LESS LATTICE MISMATCH BETWEEN THE SENSITIZER AND BARRIER LAYER GIVES RISE TO A MUCH ENHANCED PERFORMAN
URI: http://scholarbank.nus.edu.sg/handle/10635/79260
Appears in Collections:Master's Theses (Open)

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